Brief Description This is a Bipolar PNP transistor available in metal can package, having a high value of current mA with low voltage of 40v. The condition of being forward biased is when the base connected to the ground or having no supply on it, and as a signal is provided to base pin it goes reverse biased. The transistor is having DC current gain value of to which shows the amplification capacity of the transistor. As it is used for the amplification and switching. When the transistor is fully biased it allows a maximum of mA current through the collector and provide a voltage collector to emitter of 1. If we provide ground to the base pin then the transistor will be in reverse biased and said to be turn ON.
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It is basically a PNP bipolar junction transistor BJT which is mainly designed for switching and low power general purpose amplification applications. It has an ability to operate at very high speed and moderate temperature. In this transistors, N layers is composed of semiconductor material which exists between the two layers of P type material. N side represent the base side and polarity will be negative at the base side.
P side represents the emitter terminal and polarity at the emitter side will be positive. In order to conduct, base must be negative with respect to emitter. And collector-base junction will always be reverse biased so polarity must be reversed at the collector side. Collector is more negative with respect to base terminal. This transistor is a bipolar device, so conduction will be carried out by both charge carriers i.
These transistors are termed as current controlled device because small current at the base side is used to control large current at the collector and emitter side. When we apply voltage at the base side it gets biased, and it allows the electrons to flow from emitter to collector.
In case of PNP transistor, current will flow from emitter to collector but majority charge carriers will be holes which are then collected by the collector. Emitter will be highly doped and base will be lightly doped. Collector and emitter are different to each other with respect to their size and doping concentration. Collector will also be lightly doped as compared to emitter.
Circuit Diagram of 2n Following figure shows the circuit diagram of 2n Current at the emitter side is the combination of base and emitter current. This transistor comes in TO casing and can be manufactured with different pin configurations.
In case of PNP transistor, holes are transferred internally which then allow the current to flow in the external circuit. In case of NPN transistors, electrons flow externally and conduction is carried out from emitter to collector. Most of the professionals prefer NPN transistors over PNP transistors because they consider, conduction through mobility of electrons is better than conduction through mobility of holes. However, both transistors come with a lot of advantage and can be used for similar applications.
Absolute Maximum Ratings of 2n Following are the absolute maximum ratings of 2n These are the stress rating above which device can be completely damaged. Similarly, if stresses are applied for extended period of time, they can harm the device reliability. It is advised to keep the operating conduction within the range of absolute maximum ratings.
These transistors are incorporated perfectly to design a power amplifier output circuit which helps in generating the ideal output. Applications This transistor is mainly used for switching and linear amplification. Analog amplification also involve this type of transistor.
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Equivalência de 2N2907
2N2907 Datasheet, Equivalent, Cross Reference Search
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